FIELD TEST RESEARCH ON THE DOWNHOLE MULTIPHYSICS MICRO-MEASURER BASED ON THE MEMS MICROCHIP


High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Abstract Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable copyright mobility and high on-off ratio in experimental reports.Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit.However, both experimental experience and theoretical calculation

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